Temperature dependence of electron saturation velocity in GaAs

24 May 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (11) , 688-689
https://doi.org/10.1049/el:19900449

Abstract

Electron saturation velocity is determined from the space charge resistance R_c and microwave impedance Z_d of GaAs IMPATT diodes under linear conditions. Comparison between experimental measurement and theory is used in a large frequency bandwidth (2–18 GHz) at different temperatures (T≤500K). The results obtained are in good agreement with those of other authors.

Keywords

2 TO 18 GHZ
EXPERIMENTAL MEASUREMENT
MICROWAVE IMPEDANCE
TEMPERATURE DEPENDENCE
SEMICONDUCTORS
FREQUENCY BANDWIDTH
GAAS IMPATT DIODES
ELECTRON SATURATION VELOCITY
THEORY
GAAS
LINEAR CONDITIONS
300 TO 500 K
SPACE CHARGE RESISTANCE

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