Interdiffusion of lateral composition modulated (GaP)2/(InP)2 short-period superlattices with different encapsulants
- 15 July 1996
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (2) , 1233-1235
- https://doi.org/10.1063/1.362860
Abstract
The interdiffusion of lateral composition modulated (GaP)2/(InP) 2 short‐period superlattices (SPSs) is reported. The lateral composition modulation is achieved by the strain induced lateral layer ordering (SILO) process. A blueshift in the interband transition is observed by photoluminescence spectroscopy for capless and SiO 2 encapsulated annealed SPSs (800 °C, 5.5 h), while the intensity and wavelength of Si3N4 encapsulated annealed SPSs are only slightly perturbed. From transmission electron microscopy, capless annealed SPSs (800 °C, 5.5 h) retain their lateral composition modulation, however, the (001/2) satellite reflections disappear. For long anneal times (48 h), the interband transition corresponds to that of a In0.50Ga 0.50P alloy, suggesting the lateral composition modulation disappears. The observed lateral interdiffusion coefficient exceeds the vertical by a factor of ∼30, suggesting SPS interdiffusion is enhanced by native point defects.This publication has 6 references indexed in Scilit:
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