Circuit design conditions of Schottky diodes have been investigated and the fabrication method for diodes suitable for the conditions has been proposed for applications to bipolar LSI's, such as ECL RAM and Schottky TTL. It has been found that the desired Schottky diode for bipolar LSI's is not an ideal device from the theoretical point of view. Desired built-in voltage, ideal factor, series resistance, and junction capacitance for the Schottky diode have been estimated, respectively, for the bipolar RAM and Schottky TTL. A proposed Schottky diode consists of an impurity-concentration-controlled