Modeling and characterization of flicker noise in CMOS transistors from subthreshold to strong inversion
- 1 January 1993
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 285 (1) , 358-361
- https://doi.org/10.1063/1.44665
Abstract
Flicker noise behavior of n‐ and p‐channel silicon MOSFET’s operating from subthreshold to strong inversion at room to low temperatures will be described. It is found that, for various bias and temperature conditions, input referred noise in n‐channel devices show minimal gate bias dependence while p‐channel transistors show gate voltage dependence.Keywords
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