Two types of electron-beam-induced current behaviour of misfit dislocations in Si(Ge): experimental observations and modelling
- 31 May 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 24 (1-3) , 78-81
- https://doi.org/10.1016/0921-5107(94)90302-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigationsPhysica Status Solidi (a), 1993
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952