Subthreshold and scaling of PtSi Schottky barrier MOSFETs
- 1 November 2000
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 28 (5-6) , 501-506
- https://doi.org/10.1006/spmi.2000.0954
Abstract
No abstract availableKeywords
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- New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scalingElectronics Letters, 1993