Annealing effects when activating dopant atoms in ion-implanted diamond layers
- 1 July 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 59-60, 1387-1390
- https://doi.org/10.1016/0168-583x(91)95837-4
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Depth profiling of implanted 13C in diamond as a function of implantation temperatureNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Doping of diamond by coimplantation of carbon and boronApplied Physics Letters, 1989
- Fermi-Dirac statistics and the nature of the compensating donors in boron-doped diamond layersPhysical Review B, 1989
- Improved activation of boron-dopant atoms implanted into diamondNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Activation of boron-dopant atoms in ion-implanted diamondsPhysical Review B, 1988
- Volume expansion of diamond during ion implantationPhysical Review B, 1986
- Onset of hopping conduction in carbon-ion-implanted diamondPhysical Review B, 1985
- Hard conducting implanted diamond layersApplied Physics Letters, 1977
- Hopping conductivity in C-implanted amorphous diamond, or how to ruin a perfectly good diamondSolid State Communications, 1976
- The theory of impurity conductionAdvances in Physics, 1961