A fully self-aligned stacked CMOS 64K SRAM

• 1 January 1984
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 871-873
• https://doi.org/10.1109/iedm.1984.190871

Abstract

Keywords

• RANDOM ACCESS MEMORY
• CMOS TECHNOLOGY
• FABRICATION
• SILICON
• ELECTRODES
• IMPLANTS
• PLASMA APPLICATIONS
• ETCHING
• ANNEALING
• INSTRUMENTS