The thin film reactions—Mg2Si and VSi2
- 30 June 1984
- journal article
- Published by Elsevier in Acta Metallurgica
- Vol. 32 (6) , 915-918
- https://doi.org/10.1016/0001-6160(84)90028-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A mass spectroscopy study of metal silicide formationActa Metallurgica, 1984
- Film thickening kinetics by grain boundary diffusionActa Metallurgica, 1984
- Analysis of isotope separation during thin film compound formationActa Metallurgica, 1983
- The formation of vanadium silicides at thin-film interfacesJournal of Applied Physics, 1979
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975
- Formation of vanadium silicides by the interactions of V with bare and oxidized Si wafersApplied Physics Letters, 1973