Structures and phases of cleaved Ge and Si surfaces
- 15 March 1983
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (6) , 3927-3929
- https://doi.org/10.1103/physrevb.27.3927
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, and-Bonded ChainsPhysical Review Letters, 1982
- Summary Abstract: (1×1) surface unit cell on Ge cleaved at liquid helium temperaturesJournal of Vacuum Science and Technology, 1982
- Semiconductor surfacesAdvances in Physics, 1982
- Structure of Ge(111) surfaces obtained by cleavage in superhigh vacuum at low temperaturesSurface Science, 1982
- Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1Physical Review Letters, 1982
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981
- Spin Polarization and Atomic Geometry of the Si(111) SurfacePhysical Review Letters, 1981
- Surface states on Si(111)-(2×1)Physical Review B, 1981
- On the conversion temperature of cleaved stepped Si(111) surfacesJournal of Physics C: Solid State Physics, 1980
- Atomic Mismatch on Closure of Controlled Partial Splits in SiliconJournal of Applied Physics, 1972