Fabrication of self-aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors

1 September 1994

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Vol. 12 (5) , 2916-2928
https://doi.org/10.1116/1.587537

Abstract

Self-aligned processing of high efficiency power heterojunction bipolar transistors (HBTs) using implant isolation, selective wet and dry etching for mesa formation, plasma-enhanced chemical vapor deposited SiNx for sidewall spacers and through-wafer via connections is reported. GaAs/AlGaAs and GaAs/InGaP HBTs grown by metalorganic molecular beam epitaxy utilizing carbon for high, well-confined base doping produced power-added efficiencies of 63%, power gain of 10 dB and output power of 1.7 W at 4 GHz for twelve 2×15 μm2 double-emitter finger devices (GaAs/AlGaAs) and 57% power-added efficiency, power gain of 11.3 dB and output power of 0.6 W at 4 GHz (GaAs/InGaP), respectively.

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