Laser-induced fluorescence of oxygen atoms in a plasma reactor
- 6 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (1) , 35-37
- https://doi.org/10.1063/1.107486
Abstract
Two-photon laser-induced fluorescence (LIF) of ground-state oxygen atoms following excitation of the 2p3 3p1 3P–2p4 3P transition has been investigated in a rf parallel-plate plasma reactor. Stimulated emission on the 2p3 3p1 3P–2p3 3s1 3S transition is readily detected, and leads to marked nonlinearities in the LIF signal as a function of O-atom concentration. Absolute concentrations have been determined as a function of gas composition in CF4/O2 mixtures, and shown to depend on the measured wall loss rates. The method is used to indicate limitations in the use of optical emission as a diagnostic for O atoms.Keywords
This publication has 23 references indexed in Scilit:
- Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nmJournal of Applied Physics, 1991
- Growth of parametric fields in (2+1)-photon laser ionization of atomic oxygenPhysical Review A, 1990
- Plasma kinetic measurements using time-resolved actinometry: comparisons with laser-induced fluorescenceThe Journal of Physical Chemistry, 1990
- Two-photon-excited stimulated emission from atomic oxygen in flames and cold gasesOptics Letters, 1989
- Experimental study of a d.c. oxygen glow discharge by V.U.V. absorption spectroscopyPlasma Chemistry and Plasma Processing, 1987
- Photochemical effects in two-photon-excited fluorescence detection of atomic oxygen in flamesApplied Optics, 1987
- Studies of atomic oxygen in O2+CF4 rf discharges by two-photon laser-induced fluorescence and optical emission spectroscopyThe Journal of Chemical Physics, 1986
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- A Study of the Optical Emission from an rf Plasma during Semiconductor EtchingApplied Spectroscopy, 1977