Lifetime characterization of capacitive RF MEMS switches
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (0149645X) , 227-230
- https://doi.org/10.1109/mwsym.2001.966876
Abstract
The first experimental characterization of dielectric charging within capacitive RF MEMS switches has been demonstrated. Standard devices have been inserted into a time domain setup and their lifetimes have been characterized as a function of actuation voltage. Switch lifetimes were measured using a dual-pulse waveform with 30 to 65 V of actuation voltage. Resulting lifetimes were between 10/sup 4/ and 10/sup 8/ switch actuations, demonstrating an exponential relationship between lifetime and actuation voltage.Keywords
This publication has 3 references indexed in Scilit:
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