Laser-stimulated growth of the εTi2N phase in TiN films during d.c. reactive magnetron sputter deposition
- 15 February 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 196 (2) , 265-270
- https://doi.org/10.1016/0040-6090(91)90370-d
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Selected area epitaxy in II–VI compounds by laser-induced photo-metalorganic vapor phase epitaxyJournal of Vacuum Science & Technology B, 1989
- Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth techniqueJournal of Vacuum Science & Technology A, 1989
- ε-Ti2N phase growth control in titanium nitride filmsThin Solid Films, 1989
- Properties of HgCdTe films and Hg-based quantum well structures grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Atomic mobility at solid surfacesInternational Materials Reviews, 1989
- Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 dischargesApplied Physics Letters, 1988
- Low-energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive-magnetron sputteringJournal of Applied Physics, 1987