Numerical study of a model for interface growth
- 1 December 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (16) , 11419-11421
- https://doi.org/10.1103/physrevb.40.11419
Abstract
We present the first numerical study of the nonlinear stochastic differential equation characterizing interface growth, originally proposed by Kardar, Parisi, and Zhang [Phys. Rev. Lett. 56, 889 (1986)]. Our studies are carried out in two dimensions which would correspond to three-dimensional studies of microscopic models such as the Eden or ballistic-deposition models. We find that the interface width satisfies the proposed scaling relations. The exponents associated with this scaling relation are calculated for different strengths of the effective coupling in the model and seem to be different from previous calculations on microscopic models.Keywords
This publication has 24 references indexed in Scilit:
- Simple Three-Dimensional Models for Ballistic Deposition with RestructuringEurophysics Letters, 1987
- Surface Width Exponents for Three- and Four-Dimensional Eden GrowthEurophysics Letters, 1987
- Scaling of Directed Polymers in Random MediaPhysical Review Letters, 1987
- Ballistic deposition on surfacesPhysical Review A, 1986
- Dynamic Scaling of Growing InterfacesPhysical Review Letters, 1986
- Dynamic scaling and the surface structure of Eden clustersPhysical Review A, 1985
- Scaling of the active zone in the Eden process on percolation networks and the ballistic deposition modelJournal of Physics A: General Physics, 1985
- Active Zone of Growing Clusters: Diffusion-Limited Aggregation and the Eden ModelPhysical Review Letters, 1984
- Large-distance and long-time properties of a randomly stirred fluidPhysical Review A, 1977
- Computer simulation of floc formation in a colloidal suspensionJournal of Colloid Science, 1963