Behaviour of m.o.s. structures under X ray irradiation

1 June 1966

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 2 (6) , 209-210
https://doi.org/10.1049/el:19660176

Abstract

Experiments on m.o.s. structures when irradiated by X rays involve distributions of positive charges in the dielectric layer. As an interpretation of the results, including the curing of irradiated devices by annealing, we propose ionic-charge motions in the oxidised silicon, depending on the sense of the applied electric field.

Keywords

STRUCTURES
M.O.S
X RAYS
DIELECTRIC LAYER
OXIDISED SILICON
IONIC CHARGE
ELECTRIC FIELD
RAY IRRADIATION
APPLIED ELECTRIC
INVOLVE DISTRIBUTIONS

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