Theory of the MOS transistor in weak inversion-new method to determine the number of surface states
- 1 May 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 22 (5) , 282-288
- https://doi.org/10.1109/t-ed.1975.18119
Abstract
The drain current IDversus gate voltage VGof an MOST operating in weak inversion, and the influence of surface potential fluctuations on this characteristic have been studied before [1], [2]. The purpose of this paper is to derive an expression of the drain current IDversus the drain voltage VDfor devices with a channel length not smaller than 20 µm. It is demonstrated that the surface potential fluctuations do not affect the slope of the ID-VDcurve, whereas the density Nssof surface states strongly influences the slope for small drain voltages. This yields a simple and useful technique to determine Nsson MOS transistors.Keywords
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