High-gain In 0.53 Ga 0.47 As:Fe photoconductive detectors
- 27 September 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (20) , 812-813
- https://doi.org/10.1049/el:19840552
Abstract
Photoconductive detectors were fabricated on semi-insulating liquid phase epitaxial In0.53Ga0.47As/InP doped with Fe for the first time. Their performance characteristics have been compared with identical devices made from Zn-doped p-In0.53Ga0.47As/InP. Internal optical gains up to 10 were measured in the Fe-doped devices. The bias and intensity-dependent gain characteristics of these devices are discussed.Keywords
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