Instability of the behaviour of high resistivity silicon detectors due to the presence of oxide charges
- 1 March 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 288 (1) , 35-43
- https://doi.org/10.1016/0168-9002(90)90460-n
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Two-dimensional simulation of integrated detectors and electron devicesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
- Progress in semiconductor drift detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- Semiconductor drift chambers for position and energy measurementsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1985