Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters

23 September 2003

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 83 (13) , 2578-2580
https://doi.org/10.1063/1.1613043

Abstract

Influence of the size of indium clusters on optical properties of green-light-emitting InGaN quantum wells (QWs) was investigated by photoluminescence (PL), cathodoluminescence, PL excitation, and time-resolved PL techniques. Low luminescence efficiency was observed for green-light-emitting InGaN QWs with micron-sized indium clusters, in contrast to the case of InGaN QWs with submicron-sized small indium segregation. Both the thermal activation energy and the carrier lifetime dramatically decreased, while a large Stokes-like shift between absorption edge and PL peak energy was still observed for the InGaN QWs with micron-sized indium clusters. These facts indicate that the effective potential barrier between radiative and nonradiative channels (thus effective carrier localization) rapidly decreases due to the formation of micron-sized large indium clusters possessing a number of nonradiative centers, leading to significant luminescence degradation.

Keywords

This publication has 10 references indexed in Scilit:

Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors
Published by SPIE-Intl Soc Optical Eng ,2001
Linear and nonlinear optical properties of ${In}_{x} {Ga}_{1 - x} N / G a N$ heterostructures
Physical Review B, 2000
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Applied Physics Letters, 1998
Spontaneous polarization and piezoelectric constants of III-V nitrides
Physical Review B, 1997
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
Applied Physics Letters, 1997
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
Applied Physics Letters, 1997
Recombination dynamics of localized excitons in ${In}_{0.20}$ ${Ga}_{0.80}$ N- ${In}_{0.05}$ ${Ga}_{0.95}$ N multiple quantum wells
Physical Review B, 1997
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
Applied Physics Letters, 1996
Recombination dynamics in InGaN quantum wells
Applied Physics Letters, 1996
Optical properties of strained-layer superlattices with growth axis along [111]
Physical Review Letters, 1987