Bombardment induced surface chemistry on Si under keV C60 impact
- 16 May 2006
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 252 (19) , 6463-6465
- https://doi.org/10.1016/j.apsusc.2006.02.276
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Depth Profiling of Peptide Films with TOF-SIMS and a C60 ProbeAnalytical Chemistry, 2005
- ToF-SIMS imaging with cluster ion beamsApplied Surface Science, 2004
- The development of C60 and gold cluster ion guns for static SIMS analysisApplied Surface Science, 2004
- Microscopic Insights into the Sputtering of Ag{111} Induced by C60 and Ga BombardmentThe Journal of Physical Chemistry B, 2004
- Enhancement of Sputtering Yields Due to C60 versus Ga Bombardment of Ag{111} As Explored by Molecular Dynamics SimulationsAnalytical Chemistry, 2003
- A C60 Primary Ion Beam System for Time of Flight Secondary Ion Mass Spectrometry: Its Development and Secondary Ion Yield CharacteristicsAnalytical Chemistry, 2003
- View from the edgeNature, 2003
- A Comparison of Desorption Yields from C+60 to Atomic and Polyatomic Projectiles at keV EnergiesRapid Communications in Mass Spectrometry, 1996
- Secondary-ion yields from surfaces bombarded with keV molecular and cluster ionsPhysical Review Letters, 1989
- Comparison of polyatomic and atomic primary beams for secondary ion mass spectrometry of organicsAnalytical Chemistry, 1989