Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates
- 1 September 1996
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 227 (1-4) , 95-97
- https://doi.org/10.1016/0921-4526(96)00363-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 KApplied Physics Letters, 1995
- Fabrication of Silicon Quantum Wires Using Separation by Implanted Oxygen WaferJapanese Journal of Applied Physics, 1994
- Single-electron memoryJournal of Applied Physics, 1994
- Coulomb blockade in silicon based structures at temperatures up to 50 KApplied Physics Letters, 1993
- Coulomb-blockade oscillations in the conductance of a silicon metal-oxide-semiconductor field-effect-transistor point contactPhysical Review B, 1991