Conversion of step configuration induced by strain in Si1−xGex layers deposited on vicinal Si(001) surface

29 January 1996

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (5) , 628-630
https://doi.org/10.1063/1.116490

Abstract

Reflection high energy electron diffraction (RHEED) intensity measurements reveal that the strain in a Si_1−xGe_x layer on a vicinal Si(001) surface converts a (1×2) domain dominated step configuration to a (2×1) domain dominated one. The dependence of the effect on the Ge content is similar to the dependence of the critical thickness of the pseudomorphic growth of Si_1−xGe_x layers on Ge content. No conversion effect has been observed on exact Si(001) substrates.

Keywords

EPITAXIAL LAYERS
GERMANIUM ALLOYS
HETEROSTRUCTURES
MORPHOLOGY
RHEED
SILICON ALLOYS
STRAINS
STRESS RELAXATION

This publication has 0 references indexed in Scilit: