Short-wavelength continuous 300-K photopumped AlxGa1−xAs-GaAs quantum well heterostructure laser (λ≳7270 Å)
- 1 January 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (1) , 18-19
- https://doi.org/10.1063/1.92903
Abstract
Data are presented demonstrating room‐temperature continuous (cw 300 K) photopumped laser operation of AlxGa1−xAs‐GaAs (x∼0.4) quantum well heterostructures (QWH) at wavelengths as short as λ∼7270 Å, or h/ω−Eg (GaAs)∼280 meV. Photoexcitation levels on these six‐well Lz ∼28 Å QWH’s have been as low as 5.6×103 W/cm2 or Jeq ∼2.3×103 A/cm2, which is in a practical range for cw 300‐K diodes.Keywords
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