Effects of Sputtered Ir and IrO2 Electrodes on the Properties of PZT Thin Films Deposited By MOCVD
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The effect of bottom electrode thickness on the electrical properties of PZT capacitors with Ir and IrO2, electrodes was investigated, with particular attention to switching endurance characteristics. Ir and IrO2 electrodes were prepared by rf magnetron sputtering. PZT films were grown by MOCVD. Secondary ion mass spectrometry (SIMS) analysis showed thick Ir and IrO2 electrodes performed well as a barrier to the PZT elements. On the other hand, strong diffusion at the interface between PZT and the electrodes was observed, when the Ir and IrO2 electrodes were thin. From transmission electron microscope (TEM) observation, it was also found that there was an amorphous intermediate layer at the interface between the PZT and the thick Ir bottom electrode. The switching endurance characteristics were influenced by the thickness of the Ir bottom electrode.Keywords
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