Numerical simulation of SiGe HBT's at cryogenic temperatures
- 1 June 1994
- journal article
- Published by EDP Sciences in Journal de Physique IV
- Vol. 04 (C6) , C6-127
- https://doi.org/10.1051/jp4:1994620
Abstract
This paper describes SCORPIO, a new one-dimensional, drift-diffusion simulator for modeling silicon-germanium heterojunction bipolar transistors (SiGe HBT's) over a wide temperature range (77400K). SCORPIO will be used to investigate fundamental low-temperature device physics problems and key device design issues. Comparisons of simulation results with experimental measurements are being used to ensure accurate model calibration.Keywords
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