Resonance effects in three-phonon processes

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Abstract
Expressions for the relaxation rates for three-phonon "resonant" processes are obtained for the first time. It is also demonstrated that the contribution of such processes can be as high as 30% of the phonon resistivity of Ge at high temperatures. Because of the different temperature dependence from the nonresonant processes, resonance effects can be isolated experimentally and looked into other materials where it is not masked by other phonon-scattering processes.