Materials growth and its impact on devices from wide band gap II–VI compounds
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 873-879
- https://doi.org/10.1016/0022-0248(90)90817-5
Abstract
No abstract availableThis publication has 41 references indexed in Scilit:
- A review of the bulk growth of high band gap II–VI compoundsJournal of Crystal Growth, 1988
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressureJournal of Applied Physics, 1986
- The growth by MOCVD using new group VI sources and assessment by HRTEM and Cl of Zn-based II–VI single crystal layersJournal of Crystal Growth, 1985
- Characterization of ZnSe grown by molecular-beam epitaxyJournal of Crystal Growth, 1985
- Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPEJournal of Crystal Growth, 1985
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxyApplied Physics Letters, 1984
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- The role of impurities in refined ZnSe and other II–VI semiconductorsJournal of Crystal Growth, 1982
- High-purity ZnSe grown by liquid phase epitaxyApplied Physics Letters, 1981