New electron states in GaAs-GaxAl1-xAs superlattice
- 20 October 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (29) , L765-L769
- https://doi.org/10.1088/0022-3719/17/29/002
Abstract
The authors have carried out pseudopotential calculations concerning the electronic structure of (100) GaAs-Ga0.8Al0.2As superlattice with period approximately (70+70) AA. They recover the states reported earlier in optical experiments and in envelope function calculations. They also find new well localised states lying close to the top of the confining barriers. These states have large amplitudes in the confining alloy layers.Keywords
This publication has 6 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Delocalized excitons in semiconductor heterostructuresPhysical Review B, 1984
- The electronic structure and stability of localised defects in semiconductors. II. Vacancies in silicon, gallium phosphide and zinc selenideJournal of Physics C: Solid State Physics, 1984
- Bound and virtual bound states in semiconductor quantum wellsSolid State Communications, 1984
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- A new semiconductor superlatticeApplied Physics Letters, 1977