Device design considerations for ion implanted MOSFETs

• 1 January 1973
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 148-151
• https://doi.org/10.1109/iedm.1973.188671

Abstract

Keywords

• MOSFETS
• DOPING PROFILES
• FETS
• THRESHOLD VOLTAGE
• PREDICTIVE MODELS
• SWITCHES
• IMPLANTS
• CONDUCTIVITY
• SWITCHING CIRCUITS
• ION IMPLANTATION