Collector-up HBT's fabricated by Be⁺and O⁺ion implantations

• 1 January 1986
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
• Vol. 7  (1) , 32-34
• https://doi.org/10.1109/edl.1986.26282

Abstract

Keywords

• FABRICATION
• MOLECULAR BEAM EPITAXY
• PARASITIC CAPACITANCE
• BIPOLAR TRANSISTOR
• GALLIUM ARSENIDE
• ION IMPLANTATION
• ANNEALING
• HETEROJUNCTION BIPOLAR TRANSISTOR