Germanium photodetectors with induced p-n junctions
- 1 September 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (9) , 1414-1420
- https://doi.org/10.1109/t-ed.1982.20891
Abstract
An experimental investigation has been made of optoelectronic carrier transport processes in Au-Ge contacts and their dependence on temperature, which shows that these devices behave as "induced" p+-n junctions rather than as Schottky barriers. The dark currents are due predominantly to minority-carrier injection in forward bias, and to generation in the quasi-neutral region in reverse bias. The devices are formally equivalent to germanium p+-n junction photodetectors with diffused or ion-implanted junctions, but require neither high-temperature fabrication processes nor high dopant concentrations in the surface region.Keywords
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