Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
- 15 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 481-484
- https://doi.org/10.4028/www.scientific.net/msf.457-460.481
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactorJournal of Applied Physics, 2003
- Negative-Ucenters in 4Hsilicon carbidePhysical Review B, 1998
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938