Pulsed XeCl laser annealing of ZnS:Mn thin films

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Abstract
We describe pulsed XeCl (308 nm) laser annealing of ZnS thin films implanted with Mn ions and deposited onto single-crystal Si substrates. Successful annealing of the films only occurs when the specimens are held under inert gas pressure of several atmospheres during the laser pulse in order to obtain melting and regrowth of the films without appreciable vaporization. Typically, specimens annealed under 90 pounds per square inch, gauge (psig) of Ne at laser energy densities in excess of ∼0.8 J cm−2 exhibit a higher Mn photoluminescence signal than comparable samples thermally annealed at 500 °C, the difference being a factor of ∼2 at 2.5 J cm−2. Evidence for increased crystallinity in these specimens after laser annealing has also been obtained.

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