Optical monitoring of nucleation and growth of diamond films
- 28 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (26) , 3449-3451
- https://doi.org/10.1063/1.109045
Abstract
Early stages of diamondfilm deposition on molybdenum substrates using dc arc discharge in CH4/H2 gas mixtures were studied by in situ measurements of optical reflectivity of growingfilm. Ultrafine diamond grit of ≊200 Å size was used for seeding to increase nucleation density up to 2×109 cm−2 and to produce smooth thin films. Evolution of He‐Ne laser beam reflection at 0.63 μm wavelength is described in terms of Mie scattering by nonabsorbing dielectric spheres in the case of nucleated film and of light interference in the system of continuous diamondfilm on a metal substrate. During the deposition process the growth rate passes through a minimum at the moment when a minimum roughness is supposed to be achieved.Keywords
This publication has 4 references indexed in Scilit:
- Diamond crystallites nucleation on sintered tungsten: temperature and thermal treatment effectsDiamond and Related Materials, 1992
- Microfabrication of diamond films: selective deposition and etchingSurface and Coatings Technology, 1991
- Early formation of chemical vapor deposition diamond filmsApplied Physics Letters, 1990
- Properties of diamond membranes for x-ray lithographyJournal of Applied Physics, 1990