Photoelectron diffraction and low energy electron diffraction studies of Cs, K/Si(001) surfaces
- 4 April 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 214 (1-2) , 141-148
- https://doi.org/10.1016/0039-6028(89)90413-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Photoelectron diffraction study of Si(001) 2 × 1-K surface: Existence of a potassium double layerPhysical Review B, 1988
- Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure studyPhysical Review B, 1988
- Angle-resolved photoelectron-spectroscopy study of the Si(001)2×1-K surfacePhysical Review B, 1987
- Cs and O adsorption on Si(100) 2×1: A model system for promoted oxidation of semiconductorsPhysical Review B, 1987
- Study of the Si(111)-Ga surface by X-ray photoelectron and auger electron diffractionSurface Science, 1986
- Diffraction of He Atoms at a Si(100) SurfacePhysical Review Letters, 1978
- LEED, Auger and plasmon studies of negative electron affinity on Si produced by the adsorption of Cs and OSurface Science, 1973
- Structural and electronic model of negative electron affinity on the Si/Cs/O surfaceSurface Science, 1973