Twelve-channel individually addressable InGaAs/InP p-i-n photodiode and InGaAsP/InP LED arrays in a compact package
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 5 (8) , 1118-1122
- https://doi.org/10.1109/JLT.1987.1075626
Abstract
We report on monolithically integrated 1 × 12 arrays of In0.53Ga0.47As p-i-n detectors and InGaAsP LED's for use in long-wavelength optical communication system applications. The detectors are sensitive in the wavelength region of0.95-1.65 \mum, and the LED's emit at 1.30 μm. The devices utilize Si V-block fiber array connectors with one end polished at a 45° angle with respect to the fiber axis such that the optical path is bent by 90° to afford coupling laterally to the photonic device. The resultant structures are built in a 14-pin dual-in-line (DIP) compact metal package, and are capable of operation at least up to 200 Mbit/s.Keywords
This publication has 6 references indexed in Scilit:
- Electrical crosstalk in p-i-n arrays - Part I: TheoryJournal of Lightwave Technology, 1986
- Monolithically integrated 1 × 12 array of planar InGaAs/InP photodiodesJournal of Lightwave Technology, 1986
- An effective lateral fiber-optic electronic coupling and packaging technique suitable for VHSIC applicationsJournal of Lightwave Technology, 1986
- Monolithic optoelectronic integration: A new component technology for lightwave communicationsJournal of Lightwave Technology, 1985
- Individually addressable monolithic 1 × 12 light-emitting diode arrayJournal of Lightwave Technology, 1985
- Accurate Silicon Spacer Chips for an Optical-Fiber Cable ConnectorBell System Technical Journal, 1978