Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10889299,p. 80-83
https://doi.org/10.1109/bipol.2002.1042891

Abstract

A process tolerance analysis of a SiGe NPN HBT with >200 GHz f/sub T/ and >250 GHz f/sub MAX/ is presented. AC and DC device results on 200 mm wafers demonstrate a wide process window resulting in a highly manufacturable HBT technology.

Keywords

PERFORMANCE ANALYSIS
SILICON GERMANIUM
GERMANIUM SILICON ALLOYS
HETEROJUNCTION BIPOLAR TRANSISTORS
SPACE TECHNOLOGY
MANUFACTURING PROCESSES
PRODUCTION
DOPING PROFILES
MICROELECTRONICS
TOLERANCE ANALYSIS

This publication has 3 references indexed in Scilit:

Ultra high speed SiGe NPN for advanced BiCMOS technology
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
IEEE Electron Device Letters, 2002
A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure
IEEE Electron Device Letters, 2001