Effects of oxygen flooding on sputtering and ionization processes during ion bombardment
- 1 May 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 15 (3) , 452-459
- https://doi.org/10.1116/1.580873
Abstract
The effects of oxygen flooding on the sputter and ionization yield of Si and SiO 2 have been investigated. Additional processes in sputtering and ionization may be introduced by oxygen flooding beyond a simple chemical adsorption and knock-on process, leading to a larger reduction in sputter yield and a further enhancement in ionization yield for siliconsputtered from a Si substrate as compared to the values for silicon dioxide. A transient, particularly for the sputter yield, still remains, implying that the transient reduction is not as complete as desired.Keywords
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