Theory of hot-electron magnetophonon resonance in quasi-two-dimensional quantum-well structures
- 15 March 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (12) , 6731-6741
- https://doi.org/10.1103/physrevb.45.6731
Abstract
The linear and nonlinear (dc) electrical transport parallel to the walls of a quantum well, with a magnetic field B=Bz^ applied normal to its barriers, is considered for an electron-phonon system, using the formalism of nonlinear response theory [Phys. Rev. B 40, 5632 (1989)] developed previously. The structurally confined electron gas is assumed to interact with bulk phonons. Explicit expressions for hot-electron magnetophonon resonances are obtained for polar-LO-phonon scattering by computing the electric-field-dependent conductivity formula defined in the Ohm’s-law form of a nonlinear electric current. Certain values of the electric field induce transitions of the carriers between neighboring Landau levels and the maxima of the ordinary magnetophonon resonance at weak electric field evolve to minima and vice versa. The conductivity (and hence the current) oscillates as a function of the magnetic field with electric-field-induced resonances occurring in the hot-electron regime when P=, where and are the cyclotron and effective phonon frequencies, respectively, and P is an integer. These peak positions are shifted to the higher B side from the ordinary magnetophonon resonance peaks at P=, where is the bare phonon frequency. The shift of the resonance peaks is proportional to F. Unlike the three-dimensional system, additional subsidiary resonance peaks are predicted even under very weak electric fields whenever the interelectric subband transitions are allowed to take place for a relevant energy separation between two subbands, leading to an additional oscillatory behavior. The possibility of these interelectric transitions is also discussed. The dependence of the conductivity (or current), energy relaxation rate, and Landau-level broadening on the electric and magnetic fields, the thickness of the well, and the temperature is shown explicitly. Some of the results obtained here are in accordance with those available in the literature.
Keywords
This publication has 27 references indexed in Scilit:
- Magnetophonon resonance in semiconductorsPhysica B: Condensed Matter, 1990
- Hot-electron magnetophonon resonance in a two-dimensional electron gasPhysical Review B, 1989
- Normal and hot-electron magnetophonon resonance in a GaAs heterostructurePhysical Review B, 1988
- Magnetophonon Resonance at High Electric and Magnetic Fields in Small n+nn+GaAs StructuresJournal of the Physics Society Japan, 1988
- The magnetophonon effectProgress in Quantum Electronics, 1985
- Hot-electron magnetophonon spectroscopy on micron- and sub-micron-size n+nn+GaAs structuresJournal of Physics C: Solid State Physics, 1984
- High-Field Resonant Magnetotransport Measurements in SmallGaAs Structures: Evidence for Electric-Field-Induced Elastic Inter-Landau-Level ScatteringPhysical Review Letters, 1984
- Quantum transport theory of high-field conduction in semiconductorsJournal of Physics C: Solid State Physics, 1973
- Electrons and optic phonons in solids-the effects of longitudinal optical lattice vibrations on the electronic excitations of solidsReports on Progress in Physics, 1973
- The oscillatory structure of the magnetophonon effect. I. Transverse configurationJournal of Physics C: Solid State Physics, 1972