Silicon oxidation studies: A revised model for thermal oxidation
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5416-5420
- https://doi.org/10.1063/1.332722
Abstract
A number of recent experimental silicon oxidation studies has suggested that the present form of the linear-parabolic oxidation model is inadequate in explaining the results. However, the best available oxidation data are linear-parabolic in shape. The present study relieves this dilemma by revising the linear-parabolic model. The revisions are essentially twofold: a new transport flux, viz., transport in micropores is invoked and the viscoelastic properties of SiO2 are utilized. A revised linear-parabolic model is obtained which better explains high and low temperature oxidation behavior, the formation higher density SiO2, and the initial oxidation regime.This publication has 21 references indexed in Scilit:
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