Analytical model for thin-film electroluminescent devices

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Abstract
Up to now, models for the electrical behavior of thin-film electroluminescent devices have been proposed by several authors. These models usually account for electron tunneling, multiplication and recombination and involve considerable numerical calculations. In this paper we use a simplified but realistic tunnel characteristic, which makes it possible to calculate analytical steady-state solutions for a symmetrical device without space charge. Some interesting features of these solutions, like a waveform dependent threshold field and a double current-voltage characteristic will be discussed.