Magnetoresistance of heterophase materials at high pressures

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Abstract
The influence of Metal (M) and Semiconductor (SC) inclusions on magnetoresistance (MR), Hall effect R and temperature dependence of resistivity (rho) (T) of heterophase materials is investigated for a case, when the signs of magnetoresistance effects for these phases are opposite. According to model used the relative position of signs inversion borders for MR and temperature coefficient of (rho) (T) in coordinates resistivity - phase concentration ought to be independent on configuration of inclusions. For HgSe1-xSx crystals in the vicinity of pressure- induced structural phase transition the result of calculations coincide with the experimented data of MR and (rho) (T).

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