A generalized theory of an Ag+-sensitive electrolyte—insulator—semiconductor field-effect transistor with silica surface modified by chemical grafting
- 31 January 1990
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 1 (1-6) , 380-384
- https://doi.org/10.1016/0925-4005(90)80234-q
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Ion-sensing devices with silicon nitride and borosilicate glass insulatorsIEEE Transactions on Electron Devices, 1987
- Analysis of the threshold voltage and its temperature dependence in electrolyte-insulator-semiconductor field-effect transistors (EISFET's)IEEE Transactions on Electron Devices, 1987
- The absolute electrode potential: an explanatory note (Recommendations 1986)Journal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1986
- Monofunctional (Dimethylamino)silane as Silylating AgentHelvetica Chimica Acta, 1984
- The influence of counter-ion adsorption on the ψ0/pH characteristics of insulator surfacesSurface Science, 1983
- Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interfaceIEEE Transactions on Electron Devices, 1983
- Gas chromatographic evidence for phase transitions in very compact octadecyl bonded silicasJournal of Chromatography A, 1980
- Basic properties of the electrolyte—SiO2—Si system: Physical and theoretical aspectsIEEE Transactions on Electron Devices, 1979
- The effect of electrolyte on dipole layers at liquid-air interfacesThe Journal of Physical Chemistry, 1977
- Direct and Indirect Excitation Processes in Photoelectric Emission from SiliconPhysical Review B, 1962