Adsorbate-induced de-reconstruction in the interaction of H2S with Ge(001)2*1

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Abstract
The room temperature adsorption of H2S on Ge(001)2*1 has been studied using surface-extended X-ray-absorption fine structure, low-energy electron diffraction and Auger electron spectroscopy. The Ge(001)2*1-S system formed by a saturation dose followed by an anneal to remove H has a S-Ge bond length of 2.36+or-0.05 AA, with S sitting in twofold bridge sites, consistent with breaking of the Ge-Ge dimer reconstruction. Further adsorption of H2S at low or elevated temperatures is kinetically unfavourable, and it is proposed that this is consistent with the surface Ge atoms sitting in non-ideal rather than bulk-terminated positions.