Far-field radiation patterns of multiple quantum well lasers grown by MO-CVD

2 September 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (18) , 765-767
https://doi.org/10.1049/el:19820518

Abstract

The far-field radiation patterns of multiple quantum well lasers grown by metal-organic chemical vapour deposition (MO-CVD) with conducting stripe widths of 3, 5, 7 and 9 μm were studied. The results show that the existing antiguidance effect in conventional heterostructure GaAs/GaAlAs lasers is stronger in quantum well lasers due mainly to the thinner active regions.

Keywords

GAAS/GAALAS LASERS
CONDUCTING STRIPE
MULTIPLE QUANTUM WELL LASERS
MO-CVD
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
FAR-FIELD RADIATION PATTERNS
III-V SEMICONDUCTOR