A Quantitative Study of the Relationship Between Interfacial Carbon and Line Dislocation Density in Silicon Molecular Beam Epitaxy
- 1 January 1983
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 130 (1) , 214-216
- https://doi.org/10.1149/1.2119662
Abstract
Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth‐profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate‐epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration ≈1021cm−3 exhibit line dislocation densities ⩾107cm−2, while layers with interfacial carbon concentration ⩽1019cm−3 (⩽0.01 monolayer carbon) have line dislocation densities ⩽104cm−2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.Keywords
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