High speed packaged electroabsorption modulators for optical communications

7 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 469-473
https://doi.org/10.1109/ectc.2000.853198

Abstract

High speed packaged electroabsorption modulators are fabricated from the InGaAsP material system with integrated mode converters. The packaged devices exhibit 43 GHz modulation bandwidth, -10 dB electrical return loss, and 10 dB extinction for 2Vp-p. Device design and package considerations for high speed devices is presented.

Keywords

This publication has 3 references indexed in Scilit:

NRZ operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser
IEEE Photonics Technology Letters, 1997
Ultrahigh-bandwidth (42 GHz) polarisation-independentridge wavegulde electroabsorption modulator based ontensile strained InGaAsP MQW
Electronics Letters, 1995
High-speed MQW electroabsorption optical modulators integrated with low-loss waveguides
IEEE Photonics Technology Letters, 1995