TEMPERATURE AND COMPOSITIONAL DEPENDENCE OF LASER EMISSION IN Pb1−xSnxSe

1 June 1969

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 14 (11) , 333-334
https://doi.org/10.1063/1.1652675

Abstract

Laser emission has been obtained in Pb_1−xSn_xSe diodes with x up to 0.28, and the temperature dependence of the emission has been studied in the range from 1.5 to 100°K. The results strongly support a band model in which the conduction and valence band edge states cross as the Sn content is increased from 0 to 0.28. For x ≤ 0.10, the temperature coefficient of the energy gap is positive whereas for x ≥ 0.19, the temperature coefficient is negative as predicted by the band model. Also, the results provide evidence that the energy gap is direct on both sides of the crossover point which at 4.2°K occurs for x ≈ 0.15.

Keywords

This publication has 5 references indexed in Scilit:

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Physical Review Letters, 1968
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