Temperature measurements of telecommunication lasers on a micrometre scale

11 November 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (23) , 2045-2047
https://doi.org/10.1049/el:19931366

Abstract

Temperature maps of laser diode facets obtained by photothermal reflectance microscopy are presented. Biased double heterojunction InGaAsP lasers were investigated. The temperature images reveal the influence of laser mode on the spatial distribution of the heat dissipation in the device. Moreover, a study of the modulated reflectance as a function of the injection current is achieved.

Keywords

MICROMETRE SCALE
MODULATED REFLECTANCE
TELECOMMUNICATION LASERS
HEAT DISSIPATION SPATIAL DISTRIBUTION
TEMPERATURE MAPS
PHOTOTHERMAL REFLECTANCE MICROSCOPY
DFB LASER
INGAASP-INP
BIASED DOUBLE HETEROJUNCTION INGAASP LASERS
INJECTION CURRENT
TEMPERATURE MEASUREMENTS
LASER MODE

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